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"CAP-RAM: A Charge-Domain In-Memory Computing 6T-SRAM for Accurate and ..."

Zhiyu Chen et al. (2021)

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DOI: 10.1109/JSSC.2021.3056447

access: closed

type: Journal Article

metadata version: 2024-02-26

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Zhiyu Chen, Zhanghao Yu, Qing Jin, Yan He, Jingyu Wang, Sheng Lin, Dai Li, Yanzhi Wang, Kaiyuan Yang:
CAP-RAM: A Charge-Domain In-Memory Computing 6T-SRAM for Accurate and Precision-Programmable CNN Inference. IEEE J. Solid State Circuits 56(6): 1924-1935 (2021)

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