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"A BIST scheme for high-speed Gain Cell eDRAM."

Bing Yan et al. (2011)

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DOI: 10.1109/ASICON.2011.6157167

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-25

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  dblp key:
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Bing Yan, Yufeng Xie, Rui Yuan, Yinyin Lin:
A BIST scheme for high-speed Gain Cell eDRAM. ASICON 2011: 244-247

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