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"Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets."

H.-B. Jo et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830243

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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  dblp key:
  - conf/vlsit/JoLBLCKJPYLYSKK22
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  - https://dblp.org/rec/conf/vlsit/JoLBLCKJPYLYSKK22
H.-B. Jo, I.-G. Lee, J.-M. Baek, S. T. Lee, S.-M. Choi, H.-J. Kim, H.-S. Jeong, W.-S. Park, J.-H. Yoo, H.-Y. Lee, D. Y. Yun, S.-W. Son, D.-H. Ko, Tae-Woo Kim, H.-M. Kwon, S.-K. Kim, Jun-Gyu Kim, J. Yun, T. Kim, J. H. Lee, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim:
Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets. VLSI Technology and Circuits 2022: 397-398

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