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Jing Zhu 0006

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affiliation: Southeast University, National ASIC System Engineering Research Center, Nanjing, China

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2020 – today

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2024
[j9]
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Yifei Zheng, Boyu Li, Qianheng Dong, Yutao Ying, Deyuan Song, Jing Zhu, Weifeng Sun, Qinsong Qian, Long Zhang, Sheng Li, Denggui Wang, Jianjun Zhou:
A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed Level Shifter and dV_S/dt Noise Immunity Enhancement Structure. IEEE Trans. Very Large Scale Integr. Syst. 32(3): 542-551 (2024)
2023
[j8]
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Siyuan Yu, Qi Zhou, Gang Shi, Tianyang Wu, Jing Zhu, Long Zhang, Weifeng Sun, Sen Zhang, Nailong He, Ye Li:
A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity. IEEE Trans. Ind. Electron. 70(1): 741-751 (2023)
2021
[j7]
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Jing Zhu, Siyuan Yu, Yangyang Lu, Weifeng Sun, Chuanyi Cheng, Ding Yan, Yunwu Zhang, Shaohong Li, Long Zhang, Sen Zhang, Nailong He, Yan Gu:
Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices. IEEE Trans. Ind. Electron. 68(2): 1506-1514 (2021)
[j6]
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Jing Zhu, Siyuan Yu, Guichuang Zhu, Weifeng Sun, Yunqi Wang, Yangyang Lu, Yunwu Zhang, Sen Zhang, Yan Gu, Nailong He:
Device and Circuit Design for Improving the Freewheeling Characteristics of High Voltage Monolithic Integrated Circuit. IEEE Trans. Ind. Electron. 68(11): 11420-11427 (2021)
[c2]
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Jing Zhu, Ding Yan, Siyuan Yu, Weifeng Sun, Gang Shi, Siyang Liu, Sen Zhang:
33.2 A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving. ISSCC 2021: 462-464

2010 – 2019

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2018
[j5]
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Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangyang Lu, Longxing Shi, Yan Gu, Sen Zhang:
Noise Immunity and its Temperature Characteristics Study of the Capacitive-Loaded Level Shift Circuit for High Voltage Gate Drive IC. IEEE Trans. Ind. Electron. 65(4): 3027-3034 (2018)
2016
[j4]
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Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangyang Lu, Yicheng Du, Yangbo Yi:
Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot. IET Circuits Devices Syst. 10(5): 410-416 (2016)
2014
[j3]
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Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangbo Yi:
Low-jitter, high-linearity current-controlled complementary metal oxide semiconductor relaxation oscillator with optimised floating capacitors. IET Circuits Devices Syst. 8(6): 509-515 (2014)
[j2]
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Jian Chen, Jing Zhu, Guodong Sun, Weifeng Sun, Weinan Dai, Zexiang Huang:
Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time. IET Circuits Devices Syst. 8(6): 576-582 (2014)
2013
[c1]
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Jing Zhu, Yunwu Zhang, Weifeng Sun, Shengli Lu:
A novel Operational Transconductance Amplifier with high Gm using improved differential current redistribution technique (DCRT). ASICON 2013: 1-4
2010
[j1]
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Qinsong Qian, Weifeng Sun, Jing Zhu, Longxing Shi:
Investigation of the shift of hot spot in lateral diffused LDMOS under ESD conditions. Microelectron. Reliab. 50(12): 1935-1941 (2010)

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