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Pramod Kumar Tiwari
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2020 – today
- 2024
- [j6]Sai Shirov Katta, Tripty Kumari, P. S. T. N. Srinivas, Pramod Kumar Tiwari:
Logic-in-memory application of silicon nanotube-based FBFET with core-source architecture. Microelectron. J. 146: 106133 (2024) - 2023
- [j5]P. S. T. N. Srinivas, Satyabrata Jit, Pramod Kumar Tiwari
:
Impact of self-heating on thermal noise in In1-xGaxAs GAA MOSFETs. Microelectron. J. 131: 105661 (2023) - [j4]Sai Shirov Katta, Tripty Kumari, Subir Das
Design and performance assessment of a vertical feedback FET. Microelectron. J. 137: 105806 (2023) - [c7]Ashraf Maniyar, P. S. T. N. Srinivas, Pramod Kumar Tiwari
Impact of Process-Induced Inclined Sidewalls On Small Signal Parameters of Silicon Nanowire GAA MOSFET. TENCON 2023: 1272-1276 - 2022
- [j3]Ajit Kumar
Subthreshold model of asymmetric GAA junctionless FETs with scaled equivalent oxide thickness. Microelectron. J. 126: 105490 (2022) - 2021
- [c6]Sandeep Moparthi, Pramod Kumar Tiwari
Genetic algorithm-based threshold voltage prediction of SOI JLT using multi-variable nonlinear regression. ISDCS 2021: 1-4
2010 – 2019
- 2019
- [j2]Arun Kumar
Drain current modelling of double gate-all-around (DGAA) MOSFETs. IET Circuits Devices Syst. 13(4): 519-525 (2019) - [c5]Arun Kumar
Analytical Modeling of Subthreshold Current and Subthreshold Swing of Schottky-Barrier Source/Drain Double Gate-All-Around (DGAA) MOSFETs. iSES 2019: 355-359 - [c4]Visweswara Rao Samoju, Gopi Krishna Saramekala, Pramod Kumar Tiwari
Modeling of Drain Current and Analog Characteristics of Dual-Metal Quadruple Gate (DMQG) MOSFETs. iSES 2019: 365-368 - [c3]Sandeep Moparthi
Temperature Dependence of Subthreshold Characteristics of Negative Capacitance Recessed-Source/Drain (NC R-S/D) SOI MOSFET. iSES 2019: 386-389 - [c2]Deepti Gola
Analytical Modeling of Analog/RF Parameters for Trigate Junctionless Field Effect Transistor Incorporating Substrate Biasing Effects. TENCON 2019: 1838-1841 - 2011
- [c1]Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari
An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs. ISVLSI 2011: 327-328 - 2010
- [j1]Pramod Kumar Tiwari
Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs. IET Circuits Devices Syst. 4(4): 337-345 (2010)
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