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Tihomir Knezevic
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2020 – today
- 2021
- [c11]Lovro Markovic, Tihomir Knezevic, Lis K. Nanver, Tomislav Suligoj:
Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer. MIPRO 2021: 64-69 - 2020
- [c10]Lovro Markovic, Tihomir Knezevic
, Tomislav Suligoj:
Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode. MIPRO 2020: 28-33
2010 – 2019
- 2019
- [c9]Tihomir Knezevic
Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C. ESSDERC 2019: 242-245 - [c8]Tihomir Knezevic
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. MIPRO 2019: 24-29 - 2018
- [c7]Tihomir Knezevic
Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures. MIPRO 2018: 12-17 - 2017
- [c6]Tihomir Knezevic
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions. MIPRO 2017: 72-76 - 2016
- [c5]Tihomir Knezevic
Analysis of electrical and optical characteristics of InP/InGaAs avalanche photodiodes in linear regime by a new simulation environment. MIPRO 2016: 28-33 - [c4]Ivan Berdalovic, Zeljko Osrecki, Filip Segmanovic, Dragan Grubisic, Tihomir Knezevic
Design of passive-quenching active-reset circuit with adjustable hold-off time for single-photon avalanche diodes. MIPRO 2016: 34-39 - 2015
- [c3]Ivica Janekovic
Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure. MIPRO 2015: 37-41 - 2012
- [c2]Tihomir Knezevic, Tomislav Suligoj, Agata Sakic, Lis K. Nanver:
Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions. MIPRO 2012: 36-41 - 2011
- [c1]Tihomir Knezevic, Tomislav Suligoj, Agata Sakic, Lis K. Nanver:
Optimization of the perimeter doping of ultrashallow p+-n--n+ photodiodes. MIPRO 2011: 44-48
Coauthor Index
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