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Kinam Kim
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2020 – today
- 2022
- [j23]Ki-Nam Kim, Woon-San Ko, Jun-Ho Byun
, Do-Yeon Lee, Jun-Kyo Jeong, Hi-Deok Lee, Ga-Won Lee
Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods. Sensors 22(22): 8907 (2022)
2010 – 2019
- 2018
- [c18]Youngsik Kim, Ki-Nam Kim:
Design and Evaluation of a MMO Game Server. CSII (selected papers) 2018: 69-82 - 2016
- [j22]Hongjo Kim
Vision-Based Object-Centric Safety Assessment Using Fuzzy Inference: Monitoring Struck-By Accidents with Moving Objects. J. Comput. Civ. Eng. 30(4) (2016) - [c17]Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Jonghoon Jung, Giyong Yang
17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization. ISSCC 2016: 306-307 - 2015
- [j21]Seok-Ho Yoon, Ki-Nam Kim, Jiwon Hong
A community-based sampling method using DPL for online social networks. Inf. Sci. 306: 53-69 (2015) - [j20]Ki-Tae Park, Sangwan Nam, Dae-Han Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Myung-Hoon Choi, Dong-Hun Kwak, Doo-Hyun Kim, Minsu Kim, Hyun Wook Park, Sang-Won Shim, Kyung-Min Kang, Sang-Won Park, Kangbin Lee, Hyun-Jun Yoon, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dae-Seok Byeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Jeong-Hyuk Choi, Kinam Kim:
Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming. IEEE J. Solid State Circuits 50(1): 204-213 (2015) - [c16]Kinam Kim:
1.1 Silicon technologies and solutions for the data-driven world. ISSCC 2015: 1-7 - 2014
- [c15]Sang-Wook Kim, Ki-Nam Kim, Seok-Ho Yoon, Sunju Park:
Sampling in online social networks. SAC 2014: 845-849 - 2012
- [c14]Kinam Kim:
Future silicon technology. ESSCIRC 2012: 1-6 - [c13]Seong-Jin Kim, Byongmin Kang, James D. K. Kim, KeeChang Lee, Chang-Yeong Kim, Kinam Kim:
A 1920×1080 3.65μm-pixel 2D/3D image sensor with split and binning pixel structure in 0.11pm standard CMOS. ISSCC 2012: 396-398 - 2011
- [c12]Sang-Wook Kim, Ki-Nam Kim, Christos Faloutsos
Spectral analysis of a blogosphere. CIKM 2011: 2145-2148 - [c11]Kinam Kim:
The Forgotten. SIGGRAPH Asia Computer Animation Festival 2011: 13:1 - [i1]Seok-Ho Yoon, Ki-Nam Kim, Sang-Wook Kim, Sunju Park:
A Community-Based Sampling Method Using DPL for Online Social Network. CoRR abs/1109.1063 (2011) - 2010
- [j19]Kwang-Il Oh, Lee-Sup Kim, Kwang-Il Park, Young-Hyun Jun, Joo-Sun Choi, Kinam Kim:
Correction on "A 5-Gb/s/pin Transceiver for DDR Memory Interface With a Crosstalk Suppression Scheme" [Aug 09 2222-2232]. IEEE J. Solid State Circuits 45(2): 497 (2010)
2000 – 2009
- 2009
- [j18]Kwang-Il Oh, Lee-Sup Kim, Kwang-Il Park, Young-Hyun Jun, Joo-Sun Choi, Kinam Kim:
A 5-Gb/s/pin Transceiver for DDR Memory Interface With a Crosstalk Suppression Scheme. IEEE J. Solid State Circuits 44(8): 2222-2232 (2009) - [j17]Kyung-Soo Ha, Lee-Sup Kim, Seung-Jun Bae, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 0.13-µm CMOS 6 Gb/s/pin Memory Transceiver Using Pseudo-Differential Signaling for Removing Common-Mode Noise Due to SSN. IEEE J. Solid State Circuits 44(11): 3146-3162 (2009) - [c10]Yongsam Moon, Yong-Ho Cho, Hyun-Bae Lee, Byung-Hoon Jeong, Seok-Hun Hyun, Byungchul Kim, In-Chul Jeong, Seong-Young Seo, Junho Shin, Seok-Woo Choi, Ho-Sung Song, Jung-Hwan Choi, Kyehyun Kyung, Young-Hyun Jun, Kinam Kim:
1.2V 1.6Gb/s 56nm 6F2 4Gb DDR3 SDRAM with hybrid-I/O sense amplifier and segmented sub-array architecture. ISSCC 2009: 128-129 - [c9]Kyung-Soo Ha, Lee-Sup Kim, Seung-Jun Bae, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 6Gb/s/pin pseudo-differential signaling using common-mode noise rejection techniques without reference signal for DRAM interfaces. ISSCC 2009: 138-139 - 2008
- [j16]Seung-Jun Bae, Kwang-Il Park, Jeong-Don Ihm, Ho-Young Song, Woo-Jin Lee, Hyun-Jin Kim, Kyoung-Ho Kim, Yoon-Sik Park, Min-Sang Park, Hong-Kyong Lee, Sam-Young Bang, Gil-Shin Moon, Seokwon Hwang, Young-Chul Cho, Sang-Jun Hwang, Dae-Hyun Kim
An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion. IEEE J. Solid State Circuits 43(1): 121-131 (2008) - [j15]KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki-won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Yong-Jin Yoon, Kwang-Suk Yu, Gi-Tae Jeong, Hong-Sik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim:
A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput. IEEE J. Solid State Circuits 43(1): 150-162 (2008) - [j14]Ki-Tae Park, Myounggon Kang, Doogon Kim, Soonwook Hwang, Byung Yong Choi, Yeong-Taek Lee, Changhyun Kim, Kinam Kim:
A Zeroing Cell-to-Cell Interference Page Architecture With Temporary LSB Storing and Parallel MSB Program Scheme for MLC NAND Flash Memories. IEEE J. Solid State Circuits 43(4): 919-928 (2008) - [j13]Jung-Sik Kim, Kyung-Woo Nam, Chi Sung Oh, Han Gu Sohn, Donghyuk Lee, Sooyoung Kim, Jong-Wook Park, Yongjun Kim, Mi-Jo Kim, Jin-Guk Kim, Hocheol Lee, Jinhyoung Kwon, Dong Il Seo, Young-Hyun Jun, Kinam Kim:
A 512 Mb Two-Channel Mobile DRAM (OneDRAM) With Shared Memory Array. IEEE J. Solid State Circuits 43(11): 2381-2389 (2008) - [c8]Kwang-Il Oh, Lee-Sup Kim, Kwang-Il Park, Young-Hyun Jun, Kinam Kim:
A 5-Gb/s/pin transceiver for DDR memory interface with a crosstalk suppression scheme. CICC 2008: 639-642 - [c7]Seung-Jun Bae, Young-Soo Sohn, Kwang-Il Park, Kyoung-Ho Kim, Dae-Hyun Chung, Jingook Kim, Si-Hong Kim, Min-Sang Park, Jae-Hyung Lee, Sam-Young Bang, Ho-Kyung Lee, In-Soo Park, Jae-Sung Kim, Dae-Hyun Kim
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques. ISSCC 2008: 278-279 - [c6]Kyomin Sohn, Young-Ho Suh, Young-Jae Son, Daesik Yim, Kang-Young Kim, Dae-Gi Bae, Ted Kang, Hoon Lim, Soon-Moon Jung, Hyun-Geun Byun, Young-Hyun Jun, Kinam Kim:
A 100nm Double-Stacked 500MHz 72Mb Separate-I/O Synchronous SRAM with Automatic Cell-Bias Scheme and Adaptive Block Redundancy. ISSCC 2008: 386-387 - 2007
- [j12]Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho, KwangJin Lee, Changsoo Lee, Hyung-Rok Oh, Byung-Gil Choi, Qi Wang, Hye-Jin Kim, Mu-Hui Park, Yu-Hwan Ro, Suyeon Kim, Choong-Duk Ha, Ki-Sung Kim, Young-Ran Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hong-Sik Jeong, Kinam Kim, YunSueng Shin:
A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation. IEEE J. Solid State Circuits 42(1): 210-218 (2007) - [c5]Kinam Kim, Donggun Park:
The future outlook of memory devices. ESSCIRC 2007: 47 - [c4]KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki-won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Kwang-Suk Yu, Gitae Jeong, Hongsik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim:
A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput. ISSCC 2007: 472-616 - 2006
- [j11]Hyung-Rok Oh, Beak-Hyung Cho, Woo Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hye-Jin Kim, Ki-Sung Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hong-Sik Jeong, Kinam Kim:
Enhanced write performance of a 64-mb phase-change random access memory. IEEE J. Solid State Circuits 41(1): 122-126 (2006) - 2005
- [j10]Woo Yeong Cho, Beak-Hyung Cho, Byung-Gil Choi, Hyung-Rok Oh, Sangbeom Kang, Ki-Sung Kim, Kyung-Hee Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Youngnam Hwang, SuJin Ahn, Gwan-Hyeob Koh, Gitae Jeong, Hongsik Jeong, Kinam Kim:
A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM). IEEE J. Solid State Circuits 40(1): 293-300 (2005) - [j9]Yoon-Jong Song, Heung-Jin Joo, Seung-Kuk Kang, Hyun-Ho Kim, Jung-Hoon Park, Y. M. Kang, E. Y. Kang, Sung-Young Lee, Kinam Kim:
Electrical properties of highly reliable 32Mb FRAM with advanced capacitor technology. Microelectron. Reliab. 45(7-8): 1150-1153 (2005) - [c3]ByungJun Min, Kang-Woon Lee, Han-Ju Lee, So-Ra Kim, Seung-Gyu Oh, Byung-Gil Jeon, Hee-Hyun Yang, Min-Kyu Kim, Sung-Hee Cho, Honsik Cheong, Chilhee Chung, Kinam Kim:
An embedded nonvolatile FRAM with electrical fuse repair scheme and one time programming scheme for high performance smart cards. CICC 2005: 255-258 - [c2]Kinam Kim, Gitae Jeong, Hongsik Jeong, Sungyung Lee:
Emerging memory technologies. CICC 2005: 423-426 - [c1]Eunju Kim, Jung Sun Choi, Junsang Yoon, Kinam Kim, Youngju Park, Youno Park:
Chohon. SIGGRAPH Electronic Art and Animation Catalog 2005: 264 - 2003
- [j8]Gitae Jeong, Wooyoung Cho, Sujin Ahn, Hongsik Jeong, Gwanhyeob Koh, Youngnam Hwang, Kinam Kim:
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. IEEE J. Solid State Circuits 38(11): 1906-1910 (2003) - [j7]Kinam Kim, Yoon-Jong Song:
Integration technology for ferroelectric memory devices. Microelectron. Reliab. 43(3): 385-398 (2003) - 2002
- [j6]Mun-Kyu Choi, Byung-Gil Jeon, Nakwon Jang, Byung-Jun Min, Yoon-Jong Song, Sung-Yung Lee, Hyun-Ho Kim, Dong-Jin Jung, Heung-Jin Joo, Kinam Kim:
A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme. IEEE J. Solid State Circuits 37(11): 1472-1478 (2002) - [j5]Yongseok Ahn, Sanghyun Lee, Gwanhyeob Koh, Taeyoung Chung, Kinam Kim:
The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon. Microelectron. Reliab. 42(3): 349-354 (2002) - [j4]Kinam Kim, Gitae Jeong, Chan-Woong Chun, Sam-Jin Hwang:
DRAM reliability. Microelectron. Reliab. 42(4-5): 543-553 (2002) - 2000
- [j3]Byung-Gil Jeon, Mun-Kyu Choi, Yoonjong Song, Seung-Kyu Oh, Yeonbae Chung, Kang-Deog Suh, Kinam Kim:
A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit. IEEE J. Solid State Circuits 35(11): 1690-1694 (2000)
1990 – 1999
- 1999
- [j2]Hongil Yoon, Gi-Won Cha, Changsik Yoo, Nam-Jong Kim, Keum-Yong Kim, Chang Ho Lee, Kyu-Nam Lim, Kyuchan Lee, Jun-Young Jeon, Tae Sung Jung, Hongsik Jeong, Tae-Young Chung, Kinam Kim, Soo-In Cho:
A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM. IEEE J. Solid State Circuits 34(11): 1589-1599 (1999) - 1996
- [j1]Jei-Hwan Yoo, Chang-Hyun Kim, Kyu-Chan Lee, Kye-Hyun Kyung, Seung-Moon Yoo, Jung-Hwa Lee, Moon-Hae Son, Jin-Man Han, Bok-Moon Kang, Ejaz Haq, Sang-Bo Lee, Jai-Hoon Sim, Joung-Ho Kim, Byung-Sik Moon, Keum-Yong Kim, Jae-Gwan Park, Kyu-Phil Lee, Kang-Yoon Lee, Ki-Nam Kim, Soo-In Cho, Jong-Woo Park, Hyung-Kyu Lim:
A 32-bank 1 Gb self-strobing synchronous DRAM with 1 GByte/s bandwidth. IEEE J. Solid State Circuits 31(11): 1635-1644 (1996)
Coauthor Index
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