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Christophe Gaquière
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2020 – today
- 2024
- [c6]Hassan Aboushady, Noemie Beringuier-Boher, Kelly Burke, Philippe Dallemagne, Mario De Biase, Manuel Di Frangia, Virginie Deniau, Enrico Ferrari, Christophe Gaquière, Dominique Morche, Fabio Patrone, Stefano Pesci, Luigi Pomante, Andries Stam, Vincenzo Stornelli, Haralampos-G. Stratigopoulos, Mottaqiallah Taouil, Emmanuel Vaumorin, Jonathan Villain, Sander Steeghs:
Trusted SMEs for Sustainable Growth of Europeans Economical Backbone to Strengthen the Digital Sovereignty: The KDT Resilient Trust Project. DSD 2024: 620-627 - 2023
- [j14]Driss Aouladhadj
, Ettien Lazare Kpre, Virginie Deniau
Drone Detection and Tracking Using RF Identification Signals. Sensors 23(17): 7650 (2023) - 2022
- [j13]Issa Alaji
Temperature compensated power detector towards power consumption optimization in 5G devices. Microelectron. J. 120: 105351 (2022) - [c5]William R. Eisenstadt
Special Session on RF/5G Test. ETS 2022: 1-9 - 2021
- [j12]Issa Alaji
Design of zero bias power detectors towards power consumption optimization in 5G devices. Microelectron. J. 111: 105035 (2021) - [j11]Marc Margalef-Rovira
mm-Wave Through-Load Element for On-Wafer Measurement Applications. IEEE Trans. Circuits Syst. I Regul. Pap. 68(8): 3170-3183 (2021) - [c4]Marc Margalef-Rovira, Christophe Gaquière
mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs. NEWCAS 2021: 1-4 - 2020
- [j10]Mohammad Abdul Alim
Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition. Microelectron. J. 96: 104700 (2020) - [j9]Mohammad Abdul Alim
Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 39(3): 552-559 (2020) - [c3]Marc Margalef-Rovira, Abdelhalim A. Saadi, Sylvain Bourdel, Manuel J. Barragán, Emmanuel Pistono, Christophe Gaquière, Philippe Ferrari:
mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology. NEWCAS 2020: 82-85 - [i2]Arun Bhaskar, Justine Philippe, Vanessa Avramovic, Flavie Braud, Jean-François Robillard, Cédric Durand, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois:
Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA. CoRR abs/2008.09030 (2020) - [i1]Arun Bhaskar, Justine Philippe, Flavie Braud
Large-area femtosecond laser milling of silicon employing trench analysis. CoRR abs/2008.13205 (2020)
2010 – 2019
- 2018
- [c2]Alexis Gauthier, Julien Borrel
450 GHz fT SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node. BCICTS 2018: 72-75 - 2015
- [j8]Sébastien Petitdidier, Fanny Berthet, Yannick Guhel, Jean-Lionel Trolet, Philippe Mary, Christophe Gaquière
Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1719-1723 (2015) - 2014
- [c1]Pietro M. Ferreira
1-20 Ghz kΩ-range BiCMOS 55 nm reflectometer. NEWCAS 2014: 385-388 - 2012
- [j7]Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière
Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence. Microelectron. Reliab. 52(9-10): 2159-2163 (2012) - [j6]Florent Gamand, Ming Dong Li, Christophe Gaquière
A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications. IEEE Trans. Circuits Syst. II Express Briefs 59-II(11): 776-779 (2012) - 2011
- [j5]Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière
Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy. Microelectron. Reliab. 51(9-11): 1796-1800 (2011)
2000 – 2009
- 2009
- [j4]Malek Gassoumi, Jean-Marie Bluet
Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. Microelectron. J. 40(8): 1161-1165 (2009) - 2006
- [j3]Nabil Sghaier
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectron. J. 37(4): 363-370 (2006) - 2004
- [j2]Fabiana Rampazzo, Roberto Pierobon, D. Pacetta, Christophe Gaquière
Hot carrier aging degradation phenomena in GaN based MESFETs. Microelectron. Reliab. 44(9-11): 1375-1380 (2004) - 2003
- [j1]Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43(9-11): 1713-1718 (2003)
Coauthor Index
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