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Bijit Choudhuri

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2020 – today

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2024
[j7]
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  - journals/mj/BharaliCB24
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Swapna Bharali, Bijit Choudhuri, Brinda Bhowmick:
Investigation of hetero gate oxide hetero stacked triple metal vertical tunnel FET with variable interface trap charges and temperature. Microelectron. J. 143: 106054 (2024)
[j6]
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Zohmingliana, Bijit Choudhuri, Brinda Bhowmick:
Analytical modeling of drain current for DG-Graphene Nanoribbon Vertical Tunnel FET. Microelectron. J. 147: 106194 (2024)
[j5]
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Potharaju Ramesh, Bijit Choudhuri:
Unveiling the influence of temperature and interface traps on the performance of source-all-around vertical TFET. Microelectron. J. 148: 106201 (2024)
[j4]
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Zohmingliana, Bijit Choudhuri, Brinda Bhowmick:
Design of Dual-Band Rectifier Circuit for RF Energy Harvesting Using Double-Gate Graphene Nanoribbon (GNR) Vertical Tunnel FET. IEEE Trans. Consumer Electron. 70(1): 167-172 (2024)
2023
[j3]
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  - journals/mj/RameshC23
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Potharaju Ramesh, Bijit Choudhuri:
Achievement of extremely small subthreshold swing in Vertical Source-All-Around-TFET with suppressed ambipolar conduction. Microelectron. J. 142: 105990 (2023)
2022
[j2]
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  - journals/mj/MalvikaCM22
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Malvika, Bijit Choudhuri, Kavicharan Mummaneni:
Analysis of performance for novel pocket-doped NCFET under the influence of interface trap charges and temperature variation. Microelectron. J. 127: 105542 (2022)
[j1]
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Zohmingliana, Bijit Choudhuri, Brinda Bhowmick:
Study the impact of graphene channel over conventional silicon on DC/analog and RF performance of DG dual-material-gate VTFET. Microelectron. J. 128: 105581 (2022)
[c1]
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  - conf/ises/MalvikaTCM22
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Malvika, Jagritee Talukdar, Bijit Choudhuri, Kavicharan Mummaneni:
A simulation study of the effect of ferroelectric thickness and oxide variation on the performance of Highly Doped Double Pocket Double Gate NCFET based inverter. iSES 2022: 601-604

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