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Fred Gaillard
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2020 – today
- 2024
- [c17]A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier:
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. IRPS 2024: 4 - 2022
- [c16]Tadeu Mota Frutuoso, Xavier Garros, Jose Lugo-Alvarez
, Roméo Kom Kammeugne, L. D. M. Zouknak, Abygaël Viey, W. van den Daele, Philippe Ferrari, Fred Gaillard:
Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors. IRPS 2022: 3 - [c15]Lauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent, Silvano De Franceschi, Tristan Meunier:
Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K. IRPS 2022: 7 - [c14]Tadeu Mota Frutuoso, Xavier Garros, Perrine Batude, Laurent Brunet, Joris Lacord, Benoit Sklénard, V. Lapras, Claire Fenouillet-Béranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, Edoardo Catapano, Mikaël Cassé, Jose Lugo-Alvarez, Philippe Ferrari, Fred Gaillard:
Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration. VLSI Technology and Circuits 2022: 332-333 - [c13]Heimanu Niebojewski, Benoit Bertrand, Etienne Nowak
Specificities of linear Si QD arrays integration and characterization. VLSI Technology and Circuits 2022: 415-416 - 2021
- [c12]B. Rrustemi
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. ESSDERC 2021: 295-298 - [c11]Roméo Kom Kammeugne
Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. ESSDERC 2021: 299-302 - [c10]Laurent Grenouillet, Niccolo Castellani, Alain Persico, Valentina Meli, Simon Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, Sebastien Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, Thomas Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, Julien Arcamone, Etienne Nowak
16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. IMW 2021: 1-4 - [c9]Tadeu Mota Frutuoso
Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. IRPS 2021: 1-5 - [c8]Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent:
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS 2021: 1-5 - [c7]Aby-Gaël Viey
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS 2021: 1-8
2010 – 2019
- 2019
- [c6]Carlo Cagli, Luca Perniola, Fred Gaillard, Stefan Dünkel, Thomas Melde, B. Mueller, Martin Trentzsch, Sven Wittek, Sven Beyer:
Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning. IRPS 2019: 1-4 - [c5]A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard:
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS 2019: 1-5 - [c4]Aby-Gaël Viey
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS 2019: 1-6 - 2018
- [j1]Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo
Study of forward AC stress degradation of GaN-on-Si Schottky diodes. Microelectron. Reliab. 88-90: 641-644 (2018) - [c3]William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier
A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. IRPS 2018: 4 - [c2]Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik:
A new method for quickly evaluating reversible and permanent components of the BTI degradation. IRPS 2018: 6-1 - [c1]Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS 2018: 6
Coauthor Index
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last updated on 2024-10-07 21:24 CEST by the dblp team
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