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Fabian M. Bufler
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2020 – today
- 2024
- [c5]Subrat Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, A. Sharma, G. Mirabeli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert:
Thermal Performance Evaluation of Multi-Core SOCs Using Power-Thermal Co-Simulation. IRPS 2024: 1-6 - [c4]S. Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, Gioele Mirabelli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert:
Thermal Considerations for Block-Level PPA Assessment in Angstrom Era: A Comparison Study of Nanosheet FETs (A10) & Complementary FETs (A5). VLSI Technology and Circuits 2024: 1-2 - 2022
- [c3]Pieter Schuddinck, Fabian M. Bufler, Yang Xiang, Anita Farokhnejad, Gioele Mirabelli, Anne Vandooren, Bilal Chehab, A. Gupta, César Roda Neve, Geert Hellings, Julien Ryckaert:
PPAC of sheet-based CFET configurations for 4 track design with 16nm metal pitch. VLSI Technology and Circuits 2022: 365-366 - 2020
- [j6]Nguyen Hoai Ngo
, Anh Quang Nguyen
Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light. Sensors 20(23): 6895 (2020)
2010 – 2019
- 2017
- [c2]Fabian M. Bufler, Kenichi Miyaguchi, Thomas Chiarella, N. Horiguchi, Anda Mocuta:
On the ballistic ratio in 14nm-Node FinFETs. ESSDERC 2017: 176-179 - 2016
- [c1]Axel Erlebach, K. H. Lee, Fabian M. Bufler:
Empirical ballistic mobility model for drift-diffusion simulation. ESSDERC 2016: 420-423
2000 – 2009
- 2003
- [j5]Fabian M. Bufler, Andreas Schenk, Wolfgang Fichtner:
Proof of a simple time-step propagation scheme for Monte Carlo simulation. Math. Comput. Simul. 62(3-6): 323-326 (2003) - 2002
- [j4]Fabian M. Bufler, Andreas Schenk, Christoph Zechner, Natsuko Inada, Yoshinori Asahi, Wolfgang Fichtner:
Comparison of Single-Particle Monte Carlo Simulation with Measured Output Characteristics of an 0.1µm n-MOSFET. VLSI Design 15(4): 715-720 (2002) - 2001
- [j3]Fabian M. Bufler, P. Douglas Yoder, Wolfgang Fichtner:
Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs. VLSI Design 13(1-4): 163-167 (2001)
1990 – 1999
- 1998
- [j2]Fabian M. Bufler, P. Graf, Bernd Meinerzhagen:
High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models. VLSI Design 8(1-4): 41-45 (1998) - [j1]Burkhard Neinhüs, Stefan Decker, Peter Graf, Fabian M. Bufler, Bernd Meinerzhagen:
Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times. VLSI Design 8(1-4): 387-391 (1998)
Coauthor Index
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