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Maximilian Lederer
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2020 – today
- 2024
- [j3]Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De
:
Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility. Adv. Intell. Syst. 6(4) (2024) - [c20]S. Pande, Masud Rana SK, Yannick Raffel, Maximilian Lederer, Konrad Seidel, A. Chakravorty, Sourav De, Bhaswar Chakrabarti:
FeFET based LIF Neuron with Learnable Threshold and Time Constant. DRC 2024: 1-2 - [c19]Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel:
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. IMW 2024: 1-4 - [c18]Ayse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng
Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. IRPS 2024: 1-5 - [c17]Yusuke Shuto, Jun Okuno, Tsubasa Yonai, Ryo Ono, Peter Reinig, Maximilian Lederer, Konrad Seidel, Ruben Alcala, Thomas Mikolajick, Uwe Schroeder, Taku Umebayashi, Kentaro Akiyama:
HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j2]Vivek Parmar
Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator. Adv. Intell. Syst. 5(6) (2023) - [j1]Xunzhao Yin
An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine. Adv. Intell. Syst. 5(7) (2023) - [c16]Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Maximilian Lederer, Yannick Raffel, Kai Ni, Xunzhao Yin, Thomas Kämpfe, Gerald Gerlach:
Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications. ESSDERC 2023: 113-116 - [c15]David Lehninger, Ayse Sünbül, Ricardo Olivo, Thomas Kämpfe
Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress. IMW 2023: 1-4 - [c14]Franz Müller, Sourav De, Maximilian Lederer, Raik Hoffmann, Ricardo Olivo, Thomas Kämpfe
Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications. IMW 2023: 1-4 - [c13]Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? IMW 2023: 1-4 - 2022
- [c12]Yannick Raffel, Sunanda Thunder, Maximilian Lederer
Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. ICICDT 2022: 8-11 - [c11]Wenke Weinreich, Maximilian Lederer
Enablement of CMOS integrated sensor, harvesting and storage applications by ferroelectric HfO2. ICICDT 2022: 84-87 - [c10]Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. IMW 2022: 1-4 - [c9]David Lehninger, Hannes Mähne, Tarek Ali, Raik Hoffmann, Ricardo Olivo, Maximilian Lederer
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. IMW 2022: 1-4 - [c8]Yannick Raffel, Ricardo Olivo, Maximilian Lederer, Franz Müller, Raik Hoffmann, Tarek Ali, Konstantin Mertens, Luca Pirro, Maximilian Drescher, Sven Beyer, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng, Johannes Heitmann:
Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination. IMW 2022: 1-4 - [c7]Sourav De, Maximilian Lederer, Yannick Raffel, Franz Müller, Konrad Seidel, Thomas Kämpfe
Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications. ISOCC 2022: 167-168 - [c6]Gihun Choe, Prasanna Venkatesan Ravindran, Anni Lu, Jae Hur, Maximilian Lederer, André Reck, Sarah Lombardo, Nashrah Afroze, Josh Kacher, Asif Islam Khan, Shimeng Yu
Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling. VLSI Technology and Circuits 2022: 336-337 - [c5]Konrad Seidel, David Lehninger, Raik Hoffmann, Tarek Ali, Maximilian Lederer, Ricardo Revello, Konstantin Mertens, Kati Biedermann, Yukai Shen
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. VLSI Technology and Circuits 2022: 355-356 - [i2]Xunzhao Yin, Franz Müller, Qingrong Huang, Chao Li, Mohsen Imani, Zeyu Yang, Jiahao Cai, Maximilian Lederer, Ricardo Olivo, Nellie Laleni, Shan Deng, Zijian Zhao, Cheng Zhuo, Thomas Kämpfe
An Ultra-Compact Single FeFET Binary and Multi-Bit Associative Search Engine. CoRR abs/2203.07948 (2022) - 2021
- [c4]Jun Okuno, Takafumi Kunihiro, Kenta Konishi, Hideki Maemura, Yusuke Shuto, Fumitaka Sugaya, Monica Materano, Tarek Ali, Maximilian Lederer
High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application. IMW 2021: 1-3 - [i1]Xunzhao Yin, Franz Müller, Ann Franchesca Laguna, Chao Li, Wenwen Ye, Qingrong Huang, Qinming Zhang, Zhiguo Shi, Maximilian Lederer, Nellie Laleni, Shan Deng, Zijian Zhao, Michael T. Niemier, Xiaobo Sharon Hu, Cheng Zhuo, Thomas Kämpfe, Kai Ni:
Deep Random Forest with Ferroelectric Analog Content Addressable Memory. CoRR abs/2110.02495 (2021) - 2020
- [c3]Taha Soliman, Ricardo Olivo, Tobias Kirchner, Cecilia De la Parra, Maximilian Lederer
Efficient FeFET Crossbar Accelerator for Binary Neural Networks. ASAP 2020: 109-112 - [c2]Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS 2020: 1-9 - [c1]Taha Soliman, Ricardo Olivo, Tobias Kirchner, Maximilian Lederer
A Ferroelectric FET Based In-memory Architecture for Multi-Precision Neural Networks. SoCC 2020: 96-101
Coauthor Index
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