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Alexander Kloes

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2020 – today

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2023
[c24]
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  - conf/mixdes/KloesSHZR23
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Alexander Kloes, Mike Schwarz, Yi Han, Qing-Tai Zhao, Christian Römer:
Comparison between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors. MIXDES 2023: 31-36
[c23]
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Mike Schwarz, Ghader Darbandy, Christian Römer, Nadine Dersch, Alexander Kloes:
Simulation and Modeling of Silicon Semiconductor Devices and Sensors. MIXDES 2023: 42-46
2022
[c22]
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  - conf/mixdes/RoemerDSTSHMWIK22
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Christian Römer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Maik Simon, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamín Iñíguez, Alexander Kloes:
Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors. MIXDES 2022: 33-39
[c21]
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  - conf/mixdes/NikolaouLPZKDIK22
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Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes:
Impact of Mechanical Bending on the Performance of Organic Thin-Film Transistors and the Characteristic Temperature of the Density of States. MIXDES 2022: 45-50
[c20]
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  - conf/mixdes/BogunQPWKS22
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Nicolas Bogun, Emilio Pérez-Bosch Quesada, Eduardo Pérez, Christian Wenger, Alexander Kloes, Mike Schwarz:
Analytical Calculation of Inference in Memristor-based Stochastic Artificial Neural Networks. MIXDES 2022: 83-88
2021
[c19]
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Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes:
Variability-Aware Characterization of Current Mirrors Based on Organic Thin-Film Transistors on Flexible Substrates. MIXDES 2021: 56-60

2010 – 2019

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2019
[c18]
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  - conf/essderc/FarokhnejadHILK19
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Atieh Farokhnejad, Fabian Horst, Benjamín Iñíguez, François Lime, Alexander Kloes:
Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model. ESSDERC 2019: 202-205
[c17]
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Jakob Prüfer, Jakob Simon Leise, Ghader Darbandy, James W. Borchert, Hagen Klauk, Benjamín Iñíguez, Thomas Gneiting, Alexander Kloes:
Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors. MIXDES 2019: 71-75
[c16]
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Ghader Darbandy, Christian Römer, Jakob Leise, Jakob Pruefer, James W. Borchert, Hagen Klauk, Alexander Kloes:
Characterization of the Charge-Trap Dynamics in Organic Thin-Film Transistors. MIXDES 2019: 76-80
[c15]
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  - conf/mixdes/HorstFIK19
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Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes:
Closed-Form Modeling Approach of Trap-Assisted Tunneling Current for Use in Compact TFET Models. MIXDES 2019: 81-86
2018
[c14]
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Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes:
An Area Equivalent WKB Approach to Calculate the B2B Tunneling Probability for a Numerical Robust Implementation in TFET Compact Models. MIXDES 2018: 45-50
[c13]
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  - conf/mixdes/SchwarzCSKSK18
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Mike Schwarz, Laurie E. Calvet, John P. Snyder, Tillmann Krauss, Udo Schwalke, Alexander Kloes:
Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection. MIXDES 2018: 67-72
2017
[c12]
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  - conf/mixdes/GraefHHHFIK17
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Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes:
Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs. MIXDES 2017: 127-131
[c11]
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  - conf/mixdes/HosenfeldHKIL17
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Fabian Hosenfeld, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime:
Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs. MIXDES 2017: 143-148
[c10]
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  - conf/mixdes/SchwarzSKSCK17
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Mike Schwarz, John P. Snyder, Tillmann Krauss, Udo Schwalke, Laurie E. Calvet, Alexander Kloes:
Simulation framework for barrier lowering in Schottky barrier MOSFETs. MIXDES 2017: 149-153
2016
[c9]
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  - conf/essderc/HorstGHFHLZIK16
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Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes:
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. ESSDERC 2016: 456-459
[c8]
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Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Alexander Kloes, Benjamín Iñíguez:
Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs. MIXDES 2016: 47-51
[c7]
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Fabian Hosenfeld, Michael Graef, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime:
Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs. MIXDES 2016: 52-57
[c6]
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  - conf/mixdes/SchwarzK16
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Mike Schwarz, Alexander Kloes:
Analysis and 2D analytical modeling of III-V Schottky barrier Double-Gate MOSFETs. MIXDES 2016: 310-315
2015
[c5]
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  - conf/mixdes/FarokhnejadGK15
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Atieh Farokhnejad, Michael Graef, Alexander Kloes:
Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs. MIXDES 2015: 210-215
2014
[j2]
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  - journals/mj/GraefHHKI14
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Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. Microelectron. J. 45(9): 1144-1153 (2014)
[j1]
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Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez:
Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects. Microelectron. J. 45(9): 1220-1225 (2014)
[c4]
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Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez:
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs. ESSDERC 2014: 258-261
[c3]
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Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Improved analytical potential modeling in double-gate tunnel-FETs. MIXDES 2014: 49-53
2013
[c2]
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  - conf/mixdes/HoltijGHKI13
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Thomas Holtij, Michael Graef, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Unified charge model for short-channel junctionless double gate MOSFETs. MIXDES 2013: 75-80
[c1]
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Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs. MIXDES 2013: 81-85

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