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Bharat L. Bhuva
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2020 – today
- 2024
- [c28]Jenna B. Kronenberg, Yoni Xiong, Nicholas J. Pieper, Dennis R. Ball, Bharat L. Bhuva:
Single-Event Performance of Flip Flop Designs at the 5-nm Bulk FinFET Node at Near-Threshold Supply Voltages. IRPS 2024: 1-5 - [c27]Nicholas J. Pieper, M. Chun, Yoni Xiong, H. M. Dattilo, Jenna B. Kronenberg, Sanghyeon Baeg, Shi-Jie Wen, Rita Fung, D. Chan, C. Escobar, Bharat L. Bhuva:
Total-Ionizing Dose Damage from X-Ray PCB Inspection Systems. IRPS 2024: 1-7 - [c26]Balaji Narasimham, A-R. Montoya, C. Paone, T. Riehle, Mike Smith, Liming Tsau, Dennis R. Ball, Bharat L. Bhuva:
Scaling Trends and Bias Dependence of SRAM SER from 16-nm to 3-nm FinFET. IRPS 2024: 10 - [c25]Yoni Xiong, Nicholas J. Pieper, Jenna B. Kronenberg, Dennis R. Ball, Megan Casey, Bharat L. Bhuva:
Multiple Bit Upsets in Register Circuits at the 5-nm Bulk FinFET Node. IRPS 2024: 46 - 2023
- [c24]Nicholas J. Pieper, Yoni Xiong, Dennis R. Ball, J. Pasternak, Bharat L. Bhuva:
Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET Node. IRPS 2023: 1-6 - [c23]Yoni Xiong, Yueh Chiang, Nicholas J. Pieper, Dennis R. Ball, Bharat L. Bhuva:
Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET Technology. IRPS 2023: 1-6 - 2022
- [c22]Nicholas J. Pieper, Yoni Xiong, Alexandra Feeley, Dennis R. Ball, Bharat L. Bhuva:
Single-Event Latchup Vulnerability at the 7-nm FinFET Node. IRPS 2022: 5 - [c21]Yoni Xiong, Alexandra Feeley, Nicholas J. Pieper, Dennis R. Ball, Balaji Narasimham, John Brockman, N. A. Dodds, S. A. Wender, Shi-Jie Wen, Rita Fung, Bharat L. Bhuva:
Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment. IRPS 2022: 7 - 2021
- [c20]Alexandra Feeley, Yoni Xiong, Bharat L. Bhuva, Balaji Narasimham, Shi-Ji Wen, Rita Fung:
Effects of Temperature and Supply Voltage on Soft Errors for 7-nm Bulk FinFET Technology. IRPS 2021: 1-5 - [c19]Balaji Narasimham, Vikas Chaudhary, Mike Smith, Liming Tsau, Dennis R. Ball, Bharat L. Bhuva:
Scaling Trends in the Soft Error Rate of SRAMs from Planar to 5-nm FinFET. IRPS 2021: 1-5 - [c18]Yoni Xiong, Alexandra Feeley, Lloyd W. Massengill, Bharat L. Bhuva, Shi-Jie Wen, Rita Fung:
Frequency, LET, and Supply Voltage Dependence of Logic Soft Errors at the 7-nm Node. IRPS 2021: 1-5 - 2020
- [c17]Jingchen Cao, Lyuan Xu, Shi-Jie Wen, Rita Fung, Balaji Narasimham, Lloyd W. Massengill, Bharat L. Bhuva:
Temperature Dependence of Single-Event Transient Pulse Widths for 7-nm Bulk FinFET Technology. IRPS 2020: 1-5 - [c16]Lyuan Xu, Jingchen Cao, John Brockman, Carlo Cazzaniga, Christopher Frost, Shi-Jie Wen, Rita Fung, Bharat L. Bhuva:
Thermal Neutron Induced Soft Errors in 7-nm Bulk FinFET Node. IRPS 2020: 1-5 - [c15]Lyuan Xu, Jingchen Cao, Shi-Jie Wen, Rita Fung, Jamie Markevitch, Dennis R. Ball, Bharat L. Bhuva:
High-Current State triggered by Operating-Frequency Change. IRPS 2020: 1-4
2010 – 2019
- 2019
- [c14]Jingchen Cao, Lyuan Xu, Bharat L. Bhuva, Shi-Jie Wen, Richard Wong, Balaji Narasimham, Lloyd W. Massengill:
Alpha Particle Soft-Error Rates for D-FF Designs in 16-Nm and 7-Nm Bulk FinFET Technologies. IRPS 2019: 1-5 - [c13]Balaji Narasimham, K. Chandrasekharan, J. K. Wang, Bharat L. Bhuva:
Soft Error Performance of High-Speed Pulsed-DICE-Latch Design in 16 nm and 7 nm FinFET Processes. IRPS 2019: 1-4 - [c12]S. A. Wender, J. M. O'Donnell, Lukas Zavorka, Bharat L. Bhuva:
Neutron Beam Attenuation Through Semiconductor Devices During SEU Testing. IRPS 2019: 1-4 - [c11]Lyuan Xu, Jingchen Cao, Bharat L. Bhuva, Indranil Chatterjee, Shi-Jie Wen, Richard Wong, Lloyd W. Massengill:
Single-Event Upset Responses of Dual- and Triple-Well D Flip-Flop Designs in 7-nm Bulk FinFET Technology. IRPS 2019: 1-5 - 2018
- [j10]Alexandre Simionovski, Gilson I. Wirth, Ronald D. Schrimpf, Bharat L. Bhuva:
A TCAD evaluation of a single Bulk-BICS with integrative memory cell. Microelectron. J. 80: 62-68 (2018) - [c10]H. Zhang, H. Jiang, M. R. Eaker, Kurt J. Lezon, Balaji Narasimham, Nihaar N. Mahatme, Lloyd W. Massengill, Bharat L. Bhuva:
Evaluation on flip-flop physical unclonable functions in a 14/16-nm bulk FinFET technology. IRPS 2018: 1 - [c9]Hui Jiang, H. Zhang, R. C. Harrington, J. A. Maharrey, J. S. Kauppila, Lloyd W. Massengill, Bharat L. Bhuva:
Impact of supply voltage and particle LET on the soft error rate of logic circuits. IRPS 2018: 4 - [c8]H. Jiang, H. Zhang, Balaji Narasimham, Lloyd W. Massengill, Bharat L. Bhuva:
Designing soft-error-aware circuits with power and speed optimization. IRPS 2018: 5-1 - [c7]Kurt J. Lezon, Shi-Jie Wen, Y.-F. Dan, Richard Wong, Bharat L. Bhuva:
Single-event effects on optical transceiver. IRPS 2018: 6-1 - 2016
- [c6]Rongmei Chen, Enxia Zhang, Bharat L. Bhuva:
Single-event performance of differential flip-flop designs and hardening implication. IOLTS 2016: 221-226 - 2015
- [c5]Balaji Narasimham, Jung K. Wang, Narayana Vedula, Saket Gupta, Brandon Bartz, Carl Monzel, Indranil Chatterjee, Bharat L. Bhuva, Ronald D. Schrimpf, Robert A. Reed:
Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs. IRPS 2015: 2 - [c4]Nihaar N. Mahatme, Bharat L. Bhuva, Nelson J. Gaspard, T. Assis, Y. Xu, P. Marcoux, M. Vilchis, Balaji Narasimham, A. Shih, Shi-Jie Wen, Rick Wong, N. Tam, M. Shroff, S. Koyoma, A. Oates:
Terrestrial SER characterization for nanoscale technologies: A comparative study. IRPS 2015: 4 - [c3]N. Tam, Bharat L. Bhuva, Lloyd W. Massengill, Dennis R. Ball, Michael W. McCurdy, Michael L. Alles, Indranil Chatterjee:
Multi-cell soft errors at the 16-nm FinFET technology node. IRPS 2015: 4 - 2014
- [j9]Yi Ren, Anlin He, Shuting Shi, Gang Guo, Li Chen, Shi-Jie Wen, Richard Wong, N. W. van Vonno, Bharat L. Bhuva:
Single-Event Transient Measurements on a DC/DC Pulse Width Modulator Using Heavy Ion, Proton, and Pulsed Laser. J. Electron. Test. 30(1): 149-154 (2014) - 2013
- [j8]Zhichao Zhang, Yi Ren, Li Chen, Nelson J. Gaspard, Arthur F. Witulski, W. Timothy Holman, Bharat L. Bhuva, Shi-Jie Wen, Ramaswami Sammynaiken:
A Bulk Built-In Voltage Sensor to Detect Physical Location of Single-Event Transients. J. Electron. Test. 29(2): 249-253 (2013) - [j7]Nihaar N. Mahatme, Indranil Chatterjee, Akash Patki, Daniel B. Limbrick, Bharat L. Bhuva, Ronald D. Schrimpf, William H. Robinson:
An efficient technique to select logic nodes for single event transient pulse-width reduction. Microelectron. Reliab. 53(1): 114-117 (2013) - 2012
- [j6]Yi Ren, L. Fan, Li Chen, Shi-Jie Wen, Richard Wong, N. W. van Vonno, Arthur F. Witulski, Bharat L. Bhuva:
Single-Event Effects Analysis of a Pulse Width Modulator IC in a DC/DC Converter. J. Electron. Test. 28(6): 877-883 (2012) - [j5]David Rennie, David Li, Manoj Sachdev, Bharat L. Bhuva, Srikanth Jagannathan, Shi-Jie Wen, Richard Wong:
Performance, Metastability, and Soft-Error Robustness Trade-offs for Flip-Flops in 40 nm CMOS. IEEE Trans. Circuits Syst. I Regul. Pap. 59-I(8): 1626-1634 (2012) - 2011
- [c2]David Rennie, David Li, Manoj Sachdev, Bharat L. Bhuva, Srikanth Jagannathan, Shi-Jie Wen, Rick Wong:
Performance, metastability and soft-error robustness tradeoffs for flip-flops in 40nm CMOS. CICC 2011: 1-4 - [c1]Daniel B. Limbrick, Suge Yue, William H. Robinson, Bharat L. Bhuva:
Impact of Synthesis Constraints on Error Propagation Probability of Digital Circuits. DFT 2011: 103-111
2000 – 2009
- 2008
- [j4]Patrick R. Fleming, Brian D. Olson, W. Timothy Holman, Bharat L. Bhuva, Lloyd W. Massengill:
Design Technique for Mitigation of Soft Errors in Differential Switched-Capacitor Circuits. IEEE Trans. Circuits Syst. II Express Briefs 55-II(9): 838-842 (2008)
1990 – 1999
- 1993
- [j3]Venkata S. Rangavajjhala, Bharat L. Bhuva, Sherra E. Kerns:
Statistical degradation analysis of digital CMOS IC's. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(6): 837-844 (1993) - 1992
- [j2]Neeraj Kaul, Gautam Biswas, Bharat L. Bhuva:
Multi-level qualitative reasoning applied to CMOS digital circuits. Artif. Intell. Eng. 7(3): 125-137 (1992)
1980 – 1989
- 1989
- [j1]Bharat L. Bhuva, John J. Paulos, Ronald S. Gyurcsik, Sherra E. Kerns:
Switch-level simulation of total dose effects on CMOS VLSI circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(9): 933-938 (1989)
Coauthor Index
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