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Compact Model of Magnetic Tunnel Junctions for SPICE Simulation Based on Switching Probability Haoyan LIU Takashi OHSAWA Publication IEICE TRANSACTIONS on Electronics Vol.E104-C No.3 pp.121-127 Publication Date: 2021/03/01 Publicized: 2020/09/08 Online ISSN: 1745-1353 DOI: 10.1587/transele.2020ECP5011 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: magnetic tunnel junctions (MTJ), spin transfer torque magnetic random-access memory (STT-MRAM), modeling, Verilog-A, Full Text: PDF(843.1KB)>>
Summary: We propose a compact magnetic tunnel junction (MTJ) model for circuit simulation by de-facto standard SPICE in this paper. It is implemented by Verilog-A language which makes it easy to simulate MTJs with other standard devices. Based on the switching probability, we smoothly connect the adiabatic precessional model and the thermal activation model by using an interpolation technique based on the cubic spline method. We can predict the switching time after a current is applied. Meanwhile, we use appropriate physical models to describe other MTJ characteristics. Simulation results validate that the model is consistent with experimental data and effective for MTJ/CMOS hybrid circuit simulation. | |||||
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