Summary
|
For Full-Text PDF, please login, if you are a member of IEICE, or go to Pay Per View on menu list, if you are a nonmember of IEICE. |
|
Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition Hiroshi YAMAUCHI Shigekazu KUNIYOSHI Masatoshi SAKAI Kazuhiro KUDO Publication IEICE TRANSACTIONS on Electronics Vol.E98-C No.2 pp.80-85 Publication Date: 2015/02/01 Online ISSN: 1745-1353 DOI: 10.1587/transele.E98.C.80 Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics) Category: Keyword: organic field-effect transistor, vertical channel transistor, TIPS-pentacene, electrospray deposition, Full Text: PDF(1.7MB)>>
Summary: Step-edge vertical channel organic field-effect transistors (SVC-OFETs) with a very short channel have been fabricated by a novel selective electrospray deposition (SESD) method. We propose the SESD method for the fabrication of SVC-OFETs based on a 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) semiconductor layer formed by SESD. In the SESD method, an electric field is applied between the nozzle and selective patterned electrodes on a substrate. We demonstrated that the solution accumulates on the selected electrode pattern by controlling the voltage applied to the electrode. | |||||
|
|