. The nominal field-effect mobility of an n-channel TFT is 530 cm2/Vs, and its subthreshold slope is 140 mV/dec. The performance of the proposed TFTs is superior to that of top-gate TFTs fabricated using equivalent processes." />
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Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate

Hiroyuki OGATA
Kenji ICHIJO
Kenji KONDO
Akito HARA

Publication
IEICE TRANSACTIONS on Electronics   Vol.E96-C    No.2    pp.285-288
Publication Date: 2013/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.285
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
poly-Si,  TFT,  double-gate,  glass substrate,  

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Summary: 
A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is a recently popular topic in the field of Si devices. In this study, self-aligned planar metal double-gate poly-Si TFTs consisting of an embedded bottom metal gate, a top metal gate fabricated by a self-alignment process, and a lateral poly-Si film with a grain size greater than 2 µm were fabricated on a glass substrate at 550. The nominal field-effect mobility of an n-channel TFT is 530 cm2/Vs, and its subthreshold slope is 140 mV/dec. The performance of the proposed TFTs is superior to that of top-gate TFTs fabricated using equivalent processes.